Publications

Peer Reviewed Journals

  1. N. Unsuree, H. Selvi, M. Crabb, J.A. Alanis, P. Parkinson, and T.J. Echtermeyer. “Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering”, 2D Materials 6, 041004, 2019 (https://doi.org/10.1088/2053-1583/ab32f5)

  2. H. Selvi, E.W. Hill, P. Parkinson, and T.J. Echtermeyer, “Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors”, Nanoscale 10, 18926, 2018 (http://doi.org/10.1039/C8NR05285A)

  3. M. Taucer, T. J. Hammond, P. B. Corkum, and G. Vampa, C. Couture, N. Thire, B. Schmidt, F. Legare, H. Selvi, N. Unsuree, B. Hamilton, T. J. Echtermeyer, and M. Denecke. “Non-perturbative Harmonic Generation in Graphene from Intense Mid-Infrared Pulsed Light”, Phys. Rev. B. 96, 195420, 2017

  4. H. Selvi, N. Unsuree, E. Whittaker, M.P. Halsall, E.W. Hill, P. Parkinson, and T.J. Echtermeyer. “Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors, Nanoscale 10, 3399, 2018 (http://doi.org/10.1039/C7NR09591K)

  5. M. Taucer, T. J. Hammond, P. B. Corkum, and G. Vampa, C. Couture, N. Thire, B. Schmidt, F. Legare, H. Selvi, N. Unsuree, B. Hamilton, T. J. Echtermeyer, and M. Denecke. “Non-perturbative Harmonic Generation in Graphene from Intense Mid-Infrared Pulsed Light”, Phys. Rev. B 96, 195420, 2017.

  6. T.J. Echtermeyer, S. Milana, U. Sassi, A. Eiden, M. Wu, E. Lidorikis, and A.C. Ferrari. “Surface Plasmon Polariton Graphene Photodetectors”, Nano Lett. 16, 2016.

  7. T.J. Echtermeyer, P.S. Nene, M. Trushin, R.V. Gorbachev, A.L. Eiden, S. Milana, Z. Sun, J. Schliemann, E. Lidorikis, K.S. Novoselov, and A. C. Ferrari, “Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal-photodetectors", Nano Lett. 14, 3733 (2014).

  8. C. Thiele, A. Felten, C. Casiraghi, T.J. Echtermeyer, A.C. Ferrari, H. v. Lohneysen, and R. Krupke, "Electron-beam-induced direct etching of graphene", Carbon, 64, 84, (2013).

  9. T.J. Echtermeyer, L. Britnell, S. Milana, A. Lombardo, R. V. Gorbachev, A. N. Grigorenko, A. K. Geim, K. S. Novoselov, A. C. Ferrari, "Plasmonic Nanostructure Enhanced Graphene-based Photodetector", Atti Accad. Pelorit. Pericol. Cl. Sci. Fis. Mat. Nat., 89, C1V89S1P030, (2011).

  10. T.J. Echtermeyer, L. Britnell, P.K. Jasnos, A. Lombardo, R. V. Gorbachev, A. N. Grigorenko, A. K. Geim, A. C. Ferrari, K. S. Novoselov, "Strong Plasmonic Enhancement of Photovoltage in Graphene", Nat. Comm., 2, 458, (2011). Research highlight in Nature Photonics.

  11. T. Mashoff, M. Pratzer, V. Geringer, T. J. Echtermeyer, M. C. Lemme, M. Liebmann and M. Morgenstern, "Bistability and Oscillatory Motion of Natural Nanomembranes Appearing within Monolayer Graphene on Silicon Dioxide", Nano Lett., 10, 461, (2010).

  12. J. Hofrichter, B.N. Szafranek, M. Otto, T.J. Echtermeyer, M. Baus, A. Majerus, V. Geringer, M. Ramsteiner, and H. Kurz,"Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source", Nano Lett., 10,36, (2010).

  13. V. Geringer, M.Liebmann, T. J. Echtermeyer, S. Runte, R. Rückkamp, M. C. Lemme, M. Morgenstern, “Intrinsic and extrinsic corrugations of monolayer graphene deposited on SiO2”, Phys. Rev. Lett., 102, 076102, (2009).

  14. M.C. Lemme, H.D.B. Gottlob, T.J Echtermeyer, M. Schmidt, H. Kurz, R. Endres, U. Schwalke, M. Czernohorsky, D. Tezla, H.J. Osten, “Complementary metal oxide semiconductor integration of epitaxial Gd2O3”, Journal of Vacuum Science & Technology B, 27, Iss. 1, 258, (2009).

  15. M. Baus, T.J Echtermeyer, B.N. Szafranek, M.C. Lemme, H. Kurz, “Device architectures based on graphene channels”, Proceedings of 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, 269, (2008).

  16. H.D.B. Gottlob, M.C. Lemme, M. Schmidt, T.J Echtermeyer, T. Mollenhauer, H. Kurz, K. Cherkaoui, P.K. Hurley, S.B. Newcomb, “Gentle FUSI NiSi metal gate process for high-k dielectric screening”, Microelectron. Eng., 85, Iss. 10, 2019, (2008).

  17. T.J Echtermeyer, M.C. Lemme, M. Baus, B.N. Szafranek, A.K. Geim, H. Kurz, “Non-volatile switching in graphene field-effect devices”, IEEE Electron Device Letters, 29, Iss. 8, 952, (2008). Research highlight in Nature Nanotechnology.

  18. M.C. Lemme, T.J Echtermeyer, M. Baus, B.N. Szafranek, J. Bolten, M. Schmidt, T. Wahlbrink, H. Kurz, “Mobility in graphene double gate field effect transistors”, Solid State Electron., 52, Iss. 4, 514, (2008).

  19. H.D.B. Gottlob, M. Schmidt, T.J. Echtermeyer, T. Mollenhauer, M.C. Lemme, H. Kurz, “Leakage current mechanisms in epitaxial Gd2O3 high-k gate dielectrics”, Electrochemical and Solid-State Letters, 11, G12, (2008).

  20. M.C. Lemme, T.J. Echtermeyer, M. Baus, B.N. Szafranek, M. Schmidt, H. Kurz, “Towards graphene field-effect transistors”, ECS Trans., 11, 413, (2007).

  21. T.J. Echtermeyer, M.C. Lemme, J. Bolten, M. Baus, M. Ramsteiner, H. Kurz, “Graphene field-effect devices”, European Physics Journal Special Topics - Advances in Graphene Physics, 148, 19 (2007).

  22. M.C. Lemme, T.J. Echtermeyer, M. Baus, H. Kurz, “A graphene field-effect Device“, IEEE EDL, 28, 282, (2007).

  23. T.J. Echtermeyer, H.D.B. Gottlob, T. Wahlbrink, T. Mollenhauer, M. Schmidt, J.K. Efavi, M.C. Lemme, H. Kurz, “Investigation of MOS capacitors and SOI MOSFETs with epitaxial Gd2O3 and TiN electrodes”, Solid State Electron., 51, 617 (2007).

  24. H.D.B. Gottlob, T.J. Echtermeyer, T.Mollenhauer, M. Schmidt, J.K. Efavi, T. Wahlbrink, M.C. Lemme, H. Kurz, R. Endres, Y. Stefanov, U. Schwalke, "Approaches to CMOS integration of epitaxial gadolinium oxide high-K dielectrics", Proceedings of ESSDERC 2006, 150, (2006).

  25. H.D.B. Gottlob, T.J. Echtermeyer, T.Mollenhauer, J.K. Efavi, M. Schmidt, T. Wahlbrink, M.C. Lemme, H. Kurz, "Investigations of high-k gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86nm", Materials Science in Semiconductor Processing, 9, 904, (2006).

  26. H.D.B. Gottlob, T.J. Echtermeyer, M. Schmidt, T. Mollenhauer, J. K. Efavi, T. Wahlbrink, M.C. Lemme, M. Czernohorsky, E. Bugiel, A. Fissel, H.-J. Osten, H. Kurz, “0.86nm CET gate stacks with epitaxial Gd2O3 high-k dielectrics and FUSI NiSi Metal Electrodes”, IEEE EDL, 27, 814, (2006).

  27. H.D.B Gottlob, T. Mollenhauer, T. Wahlbrink, M. Schmidt, T.J. Echtermeyer, J.K Efavi, M.C. Lemme, H. Kurz, “Scalable gate first process for SOI MOSFETs with epitaxial high-k dielectrics”, Journal of Vacuum Science & Technology B, 24, 710, (2006).

  28. H.D.B Gottlob, T.J. Echtermeyer, T. Mollenhauer, J.K. Efavi, M. Schmidt, T. Wahlbrink, M.C. Lemme, H. Kurz, M. Czernohorsky, E. Bugiel, H.-J. Osten, A. Fissel, “CMOS integration of epitaxial Gd2O3 high-k gate dielectrics”, Solid StateElectronics, 50, 979, (2006).

‚Äč

The Echtermeyer Lab is affiliated with but does not neccessarily represent the opinion of

The Department of Electrical & Electronic Engineering

Photon Science Institute

National Graphene Institute

University of Manchester

© 2019 by Tim Echtermeyer